| 摘要 |
A method for manufacturing a wiring of a semiconductor device is provided to prevent HF generated from reaction between a fluorine radical and H2O by preventing an external diffusion effect of fluorine on a surface of a FSG(Fluorine Silicate Glass) layer. A FSG layer(102) as an interlayer dielectric is formed on an upper part of a metal line(100). A via hole is formed within the FSG layer by performing an etch process. The via hole is extended to the metal line. Ions of a metal material having a constant thickness are implanted into a surface of the FSG layer including the via hole. A metal layer is deposited within the via hole. The metal layer is connected with the metal line. A thermal process is performed to form a surface of the FSG layer as a metal compound. A planarization process is performed to planarize the metal layer. The metal compound is removed from the surface of the FSG layer.
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