发明名称 LIQUID COMPOSITION FOR REMOVING PHOTORESIST RESIDUE AND POLYMER RESIDUE
摘要 <p>Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process. A residue removing method using such composition is also provided. The composition removes the photoresist residue and/or the polymer residue generated in the manufacturing process of a semiconductor circuit element having a metal wiring. The composition includes a fluorine compound of 0.5-3.0 mass% and water not over 30 mass%, and has a pH of 4 or less.</p>
申请公布号 KR20090068330(A) 申请公布日期 2009.06.26
申请号 KR20097007655 申请日期 2009.04.14
申请人 KANTO KAGAKU KABUSHIKI KAISHA 发明人 OHWADA TAKUO
分类号 G03F7/42 主分类号 G03F7/42
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