发明名称 LASER DICING DEVICE AND DICING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser dicing device and dicing method that select proper processing conditions stably regardless of the experience of an operator. <P>SOLUTION: Thickness of a wafer is measured using an SD camera, or the like (S12), and wafer property information indicating the information of the surface or the interior of a wafer is acquired (S14). Based on the thickness of a wafer thus measured, the thickness and the number of layers in a reforming region for dicing a wafer into chips are determined (S16). Based on the wafer property information acquired at S14, processing conditions for achieving the thickness and the number of layers in a reforming region determined at S16 are selected from a database (S18). <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009140958(A) 申请公布日期 2009.06.25
申请号 JP20070312524 申请日期 2007.12.03
申请人 TOKYO SEIMITSU CO LTD 发明人 SHIMIZU TAKASUKE
分类号 H01L21/301;B23K26/00;B23K26/38;B23K26/40;B23K101/40 主分类号 H01L21/301
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