LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent unevenness of the film thickness of a light emitting layer due to conduction holes of an insulating layer.

SOLUTION: A current source transistor TS is formed on the surface of a substrate 10. A second insulating layer 46 and a planarization layer 48 cover the current source transistor TS. A light emitting element E is an organic EL element in which a light emitting layer 56 is interposed between a first electrode 52 and a second electrode 58. The first electrode 52 is formed on the surface of the planarization layer 48 and is connected to a drain electrode of the current source transistor TS via the conduction hole Hb1 which is formed in a side in the planarization layer 48 and the second insulating layer 46, wherein the side is opposite to the light emitting element E side across the current source transistor TS.

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