| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a Cu wiring pattern and further to reduce void defects in wiring while improving stress migration resistance of a Cu-Mn alloy layer forming a barrier metal structure of the Cu wiring pattern in combination with a barrier metal film containing a refractory metal element. SOLUTION: A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the semiconductor substrate, a concave portion disposed in the insulating film, a copper-containing first film disposed on an inner wall of the concave portion, a copper-containing second film disposed above the first film and filled in the concave portion, and a manganese-containing oxide layer disposed between the first film and the second film. Furthermore, a copper interconnection is formed on the structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80 to 120°C. COPYRIGHT: (C)2009,JPO&INPIT
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