| 摘要 |
Provided is a method of manufacturing a metal interconnection of a semiconductor device. According to the method, a first dielectric is formed on a semiconductor substrate having a device thereon, and a second dielectric and a metal layer pattern are formed on the first dielectric. Then, a first polymer pattern surrounding a photoresist pattern is formed on the second dielectric, and a via hole is formed in the second dielectric by etching using the first polymer pattern as a mask. The photoresist pattern and the polymer pattern are removed, and a contact is formed by filling the via hole.
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