发明名称 |
Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device |
摘要 |
Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
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申请公布号 |
US2009159923(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080314402 |
申请日期 |
2008.12.10 |
申请人 |
KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
发明人 |
KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
分类号 |
H01L21/336;H01L21/338;H01L29/778;H01L29/78;H01L29/812;H01S5/028;H01S5/343 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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