发明名称 |
APPARATUS AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS, AND PHOTOELECTRIC CONVERSION ELEMENT |
摘要 |
<p>Provided are an apparatus and a method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor layer film on a substrate W by microwave plasma CVD. The apparatus 100 includes a chamber 10, the chamber 10 being an enclosed space containing a base, a substrate W of a subject for thin-film formation being mounted on the base, a first gas supply unit 40 that supplies a plasma excitation region in the chamber 10 with plasma excitation gas, a pressure regulation unit 70 that regulates the pressure in the chamber 10, a second gas supply unit 50 that supplies a plasma diffusion region in the chamber 10 with raw gas, a microwave application unit 20 that applies microwaves into the chamber 10, and a bias voltage application unit 60 that selects and applies a substrate bias voltage to the substrate W in accordance with the type of gas.</p> |
申请公布号 |
WO2009078153(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
WO2008JP03734 |
申请日期 |
2008.12.12 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY;OHMI, TADAHIRO;TERAMOTO, AKINOBU;GOTO, TETSUYA;TANAKA, KOUJI |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU;GOTO, TETSUYA;TANAKA, KOUJI |
分类号 |
C23C16/511;H01L31/04 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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