MOS DEVICE WITH LOW ON-RESISTANCE

摘要

Metal oxide semiconductor (MOS) device comprising a drain region, a gate region surrounding the drain region and formed in a loop around the drain region, a plurality of source regions arranged around the gate region, wherein each source region is situated across from a corresponding side of the drain region, and a plurality of bulk regions arranged around the gate region, wherein one or more of the plurality of source regions separate one or more of the plurality of bulk regions from the gate region.