| 摘要 |
A method for forming an isolation layer of a semiconductor device is provided to maintain a refresh characteristic of an NMOS region and to prevent a HEIP effect of a PMOS region by removing selectively a liner nitride layer of the PMOS region in an isolation forming process using a STI(Shallow Trench Isolation) process. An isolation trench(23) is formed by etching selectively a semiconductor substrate(20) having an NMOS area and a PMOS area. A sidewall oxide layer(24) is formed on a surface of the trench. A liner nitride layer(25) and a liner oxide layer(26) are formed on a front surface of the resultant including the sidewall oxide layer. A first insulating layer for burying the trench is formed on the entire structure of the resultant including the liner oxide layer. The first insulating layer of the PMOS region, the liner oxide layer, and the liner nitride layer are removed selectively. A second insulating layer is formed to fill the trench of the PMOS region.
|
