| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method to form a bump in a uniform height on a wafer by preventing the formation of a higher bump in the orientation flat side and in the opposite top side of the wafer regarding bump plating step to form a gold bump electrode of about 15 to 20μm in a semiconductor product such as an LCD driver. <P>SOLUTION: An insulating annular shielding plate 5 having an elliptical center aperture 9 is arranged between an anode electrode 4 and the wafer 1 in regard to the formation of the gold bump on the semiconductor wafer 1 by the electric plating process. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
