| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has transistors differing in channel length, is improved in flexibility of design, and can prevent gate capacity from increasing, and to provide a method of manufacturing the same. <P>SOLUTION: The method of manufacturing the semiconductor device 100 includes steps of: forming active regions 41 and 42 of a first conductivity type on a semiconductor substrate 1 and forming a plurality of silicon columns 4a to 4d including the silicon columns 4b and 4c for channel, and then forming a first semiconductor region 7a of a second conductivity type; forming silicon columns 4a and 4d for gate potential supply by providing an insulating film 10 for capacity increase prevention; providing a gate insulating film 11 at peripheries of the silicon columns 4b and 4c for channel; forming an electrode 12b for gate potential supply and a gate electrode 12a and connecting them together; forming a first interlayer dielectric 13; reducing the height of the silicon column 4b for channel; and forming a second semiconductor region 7b of the second conductivity type. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
