MRAM DEVICE WITH SHARED SOURCE LINE

摘要

In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell. The memory cell may be formed by spin transfer torque magnetoresistive memory cells having selection field effect transistors. The memory cell may also be formed as complementary cell pairs. Half-selected cells are supplied with or across them to prevent read disturb.