| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesiveness between a single crystal semiconductor substrate and a supporting substrate even when there is a gap between them, in a process for laminating these substrates and forming a thin film single crystal semiconductor layer peeled from the single crystal semiconductor substrate on the supporting substrate. SOLUTION: A frame-shaped first insulating layer and a second insulating layer provided like an island shape in a region surrounded by the first insulating layer are formed on the top surface of the supporting substrate. The supporting substrate and the single crystal semiconductor substrate in which a damaged layer is formed are overlaid, and a gap between the single crystal semiconductor substrate and the supporting substrate is made a decompressed condition in a vacuum chamber, and then the single crystal semiconductor substrate and the supporting substrate are released to air. A heat treatment is performed in a condition where the single crystal semiconductor substrate and the supporting substrate are overlaid, and the single crystal semiconductor substrate is peeled off with the damaged layer as a cleavage face, thereby the single crystal semiconductor layer peeled off from the single crystal semiconductor substrate is fixed onto the first and second insulating layers on the supporting substrate. COPYRIGHT: (C)2009,JPO&INPIT
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