| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device capable of improving reliability, operational speed and yield. SOLUTION: The non-volatile semiconductor storage device includes a charge storage layer 14 and a control gate 24. The charge storage layer 14 is formed above a channel region of a semiconductor substrate 10. The control gate 24 is formed above or on the side of the charge storage layer 14, and contains polysilicon or polysilicon germanium. The control gate 24 further contains arsenic and at least one of carbon and lithium. The arsenic is contained in the control gate 24 at a high concentration compared with a case where at least one of carbon and lithium is not contained in the control gate 24. COPYRIGHT: (C)2009,JPO&INPIT
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