| 摘要 |
A semiconductor device has gate electrodes disposed in plural columns, respectively, over a semiconductor substrate in such a way as to be lined up along the direction of a gate length, and a gate connection portion provided in the same layer where the respective gate electrodes in the plural columns are placed, for electrically connecting the gate electrodes with each other. The gate connection portion includes a protrusion protruding outward in the direction of the gate length from the gate electrode positioned at the outermost ends of the gate electrodes disposed in the plural columns, respectively.
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