| 摘要 |
Provided is a substrate processing apparatus which is capable of suppressing the erosion of a metal member installed inside the processing chamber. The substrate processing apparatus includes: a processing chamber for performing a processing of forming a high dielectric constant film on a substrate; a processing gas supply system for supplying a processing gas into the processing chamber in order to form the high dielectric constant film; and a cleaning gas supply system for supplying a cleaning gas, which comprises a halogen-based gas except for a fluorine-based gas, into the processing chamber in order to remove materials including the high dielectric constant film deposited on the inside of the processing chamber, wherein a metal member is installed inside the processing chamber, and a DLC film is formed on at least a part of a surface of the metal member where the cleaning gas contacts.
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