| 摘要 |
<p>A continuous diffusion region having either a P-type or N-type polarity formed in a semiconductor substrate, comprising a first transistor formed in the continuous diffusion region, a second transistor formed in an area within the continuous diffusion region that is different from the area where the first transistor is formed, a third transistor formed within the continuous diffusion region in an area between the first and second transistors, having a gate electrode to which a given electric potential is applied, and a fourth transistor formed within the continuous diffusion region in an area between the second and third transistors, having a gate electrode to which a given electric potential is applied.</p> |
