| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding device that efficiently performs surface treatment for both the object under bonding and wire during the bonding processing operation. <P>SOLUTION: The bonding device has a bonding processing section 100 for bonding a wire 18 to a pad or an electrode using the wire 18 inserted into a capillary 17 in an inert gas atmosphere, and two plasma torches for performing surface treatment for the pad or electrode and an initial ball 19 by irradiating plasma gas to the pad or electrode and the initial ball 19 at the front edge of the capillary 17 during bonding in an inert gas atmosphere. A plasma torch 20, which is disposed on a slant relative to a bonding plane of a substrate 41 and a semiconductor chip 42, irradiates plasma to the pad or electrode and the initial ball 19 at the front edge of a bonding tool at the same time. <P>COPYRIGHT: (C)2009,JPO&INPIT |
