MICROWAVE ION SOURCE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a microwave ion source device realizing low-cost prevention of discharge in material gas piping flowing a material gas to an ion source and highly accurate gas flow rate control using material gas flow rate controlling means.

SOLUTION: The microwave ion source device includes the ion source 1 installed in a high-voltage area 3 and exciting the material gas supplied from a gas cylinder 2 with microwaves into plasma state and drawing out the plasma as ion beams. A capillary tube 9 generating a difference in pressure of the material gas is formed in a high-voltage area of the material gas piping 6 flowing the material gas supplied from the gas cylinder 2 and a mass flow controller 11 controlling the pressure of the material gas in a low-voltage area of the material gas pining 6 to control the supply amount of the material gas.

COPYRIGHT: (C)2009,JPO&INPIT