| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which has a small reverse leakage current, and can save power and be driven with low voltage. SOLUTION: The Schottky barrier diode includes a semiconductor substrate 1 having a first-conductivity-type semiconductor layer 2 on its surface, a second-conductivity-type semiconductor layer 7 configuring a composite rectification region provided at a predetermined depth from the surface of the first-conductivity-type semiconductor layer, and a metal layer 20 disposed so as to contact the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. In the Schottky barrier diode, the surface of the first-conductivity-type semiconductor layer forms a ä110} plane. COPYRIGHT: (C)2009,JPO&INPIT |
