发明名称 |
NON-VOLATILE TWO-TRANSISTOR PROGRAMMABLE LOGIC CELL AND ARRAY LAYOUT |
摘要 |
A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor.
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申请公布号 |
US2009159954(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20090359481 |
申请日期 |
2009.01.26 |
申请人 |
ACTEL CORPORATION |
发明人 |
DHAOUI FETHI;MCCOLLUM JOHN;BELLIPPADY VIDYADHARA;WANG ZHIGANG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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