发明名称 Leakage current cut-off device for ternary content addressable memory
摘要 A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.
申请公布号 US2009161400(A1) 申请公布日期 2009.06.25
申请号 US20080007826 申请日期 2008.01.16
申请人 HUANG PO-TSANG;LIU WEN-YEN;HWANG WEI 发明人 HUANG PO-TSANG;LIU WEN-YEN;HWANG WEI
分类号 G11C15/00;G11C5/14 主分类号 G11C15/00
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