发明名称 |
Leakage current cut-off device for ternary content addressable memory |
摘要 |
A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.
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申请公布号 |
US2009161400(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080007826 |
申请日期 |
2008.01.16 |
申请人 |
HUANG PO-TSANG;LIU WEN-YEN;HWANG WEI |
发明人 |
HUANG PO-TSANG;LIU WEN-YEN;HWANG WEI |
分类号 |
G11C15/00;G11C5/14 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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