发明名称 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.
申请公布号 US2009162981(A1) 申请公布日期 2009.06.25
申请号 US20090372541 申请日期 2009.02.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YIN HUAXIANG;NOGUCHI TAKASHI;XIANYU WENXU;KIM DO-YOUNG
分类号 H01L21/84;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/786 主分类号 H01L21/84
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