发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.
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申请公布号 |
US2009162981(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20090372541 |
申请日期 |
2009.02.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YIN HUAXIANG;NOGUCHI TAKASHI;XIANYU WENXU;KIM DO-YOUNG |
分类号 |
H01L21/84;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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