| 摘要 |
A memory device and a refresh method are provided herein. The memory device includes a memory array having memory rows. When an array refresh strobe (ARS) signal is received, it is determined whether the memory rows are required to be refreshed according to tag flags and reset statuses corresponding to the memory rows. When a row refresh strobe (RRS) signal is received, it is determined whether to refresh one of the memory rows according to a plurality of parameters including a value of a row to refresh counter, a value of a refresh deadline counter and/or a queue. When it is decided to start a refresh operation, one of the memory rows is selected according to the tag flag and the status, and the status of the selected memory row is updated after the selected memory row is refreshed.
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