| 摘要 |
A semiconductor having a metal line and a method of manufacturing a metal line in a semiconductor device is disclosed. In one example embodiment, a method of manufacturing a metal line in a semiconductor device includes various acts. A metal film for a metal line is formed on an interlayer dielectric layer of a semiconductor substrate. A silicon oxide hard mask film is formed on the metal film. A bottom anti-reflection (BARC) layer is formed on the hard mask film. The BARC layer, the hard mask film, and the metal film are selectively dry etched to form a metal line.
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