SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A solid-state imaging device having a planarized structure exhibiting high sensitivity over a wide wavelength region from visible light to near infrared light, and a method for fabricating such solid-state imaging device. The method for fabricating the solid-state imaging device comprises a step for forming a circuit portion (30) on a substrate (10); a step for forming a lower electrode layer (25) on the circuit portion (30); a step for separating the lower electrode layer (25) for every pixel by patterning; a step for forming a compound semiconductor thin film (24) having a chalcopyrite structure on the entire surface of the element region; a step for applying a resist layer (27) onto the compound semiconductor thin film (24) and then patterning the compound semiconductor thin film for every pixel in accordance with the separated underlying lower electrode layer (25); a step for forming an isolation region (34) on the compound semiconductor thin film (24) by implanting ions into the entire surface of the element region; a step for striping the resist layer (27) and exposing the surface of the compound semiconductor film (24) isolated by the isolation region (34) for every element; and a step for forming a transparent electrode layer (26) planarly on the entire surface of the element region.