METHOD FOR FABRICATING THIN-FILM LAMINATED CAPACITOR

摘要

There is provided a method for fabricating a thin-film laminated capacitor, capable of reducing the number of times of etching electrode layers and dielectric layers. On a substrate (12), n number of electrode layers (30), where n is four or more, and (n-1) number of dielectric layers (40) are alternately stacked to form a capacitor portion (18). A total of k times of etching is performed from the same side, and in the i-th etching, through-holes (21x to 23x, 25x to 27x) passing through ai layers of each of the electrode layers (30) and the dielectric layers (40) are formed. Assuming that at least one of ai is two or more and a relation of k < n - 1 is satisfied, it is possible to expose the second to n-th layers of the electrode layers (30) from the etching start side at the bottoms of the through-holes.