Semiconductor device i.e. n-channel super-junction-MOS-transistor, for power applications, has PN-column layer comprising column layers with impurity amount differences that are positive and negative, respectively

摘要

The device i.e. n-channel super-junction-MOS-transistor (100), has a PN-column layer (11) comprising a column layer (11a) arranged on an N-type semiconductor layer (1). Another column layer (11b) arranged between the former column layer and a P-type semiconductor layer (3). The semiconductor layer (3) is arranged on the PN-column layer, which acts as super-junction. The column layers have impurity amount differences, which are constant and are defined in a predetermined depth of two boundaries, respectively, where the impurity amount differences are respectively positive and negative.