POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

摘要

In a power semiconductor device with a semiconductor substrate (100) and first electrical contact (203) being formed on a first main side (202) and a second electrical contact (205) being formed on a second main side (204) opposite the first main side (202), said semiconductor substrate (100) comprises at least a two-layer structure with layers of different conductivity types. Said at least two-layer structure comprises a first layer (1) of a second conductivity type contacting the first electrical contact (203), and a second layer (2) of a first conductivity type being arranged on the first layer (1) on the side opposite the first electrical contact (203). The substrate (100) comprises an inner substrate region (110) of a substrate thickness (101 ) and an edge region (120), in which the substrate thickness (101) is reduced, the edge region (120) having an edge region width (121). The second layer (2) comprises an inner region (22), which is covered by the first layer (1), and an outer region (24), on which no first layer (1 ) is arranged and which has an outer region width (25). The first layer (1) is a diffused layer, which is laterally surrounded by the outer region (24) of the second layer (2) and the first layer (1) partially extends into the edge region (120).