发明名称 METHOD FOR MANUFACTURING REACTION SINTERED SILICON CARBIDE STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reaction sintered silicon carbide structure which has excellent structural strength, corrosion resistance, durability, and the like in a wide service temperature range from room temperature up to high temperature and can easily and efficiently manufacture even a small-sized structure having an intricate shape with high dimensional accuracy. <P>SOLUTION: The method for manufacturing the reaction sintered silicon carbide structure is characterized as follows. A molded body containing silicon carbide and carbon powders is formed using a core 7, and the molded body has a pore 5 corresponding to the configuration of the core 7 inside. The obtained molded body is subjected to a binder removing treatment to form a degreased body, thereafter the degreased body is heated to be impregnated with molten silicon and to be subjected to reaction sintering, thereby making an integral sintered compact. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009137839(A) 申请公布日期 2009.06.25
申请号 JP20090004894 申请日期 2009.01.13
申请人 TOSHIBA CORP 发明人 KAMEDA TSUNEJI;SUYAMA AKIKO;ITO YOSHIYASU;MARUYAMA SHIGEKI;IIDA NORIHIKO
分类号 C04B35/573;B28B1/26;B28B3/02;B28B3/26;C04B35/565;F28F21/02 主分类号 C04B35/573
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