发明名称 PLASMA PROCESSING APPARATUS AND PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To improve the ignition performance of plasma by applying a voltage for electrostatic adsorption in a plasma processing apparatus. <P>SOLUTION: The plasma processing apparatus includes a vacuum processing chamber 115, a testpiece stand 101 arranged in the vacuum processing chamber, and an antenna electrode 105 for supplying high frequency power to the inside of the vacuum processing chamber and generating plasma. The plasma processing apparatus allows a testpiece arranged on the testpiece stand to be subjected to plasma processing using the generated plasma. The testpiece stand 101 includes an insulated electrode for electrostatic adsorption on a testpiece mounting surface. The ignition performance of plasma is improved by supplying a predetermined direct current voltage to the electrode for electrostatic adsorption and charging the electrode in a predetermined period before supplying high-frequency power to the antenna electrode and generating plasma. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009141014(A) 申请公布日期 2009.06.25
申请号 JP20070313836 申请日期 2007.12.04
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ABE TAKAHIRO;KIKKAI MOTOHIKO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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