MANUFACTURING METHOD OF N-TYPE AND P-TYPE CHALCOGENIDE MATERIALS, CHALCOGENIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an n-type chalcogenide material and a p-type chalcogenide material, and a method of manufacturing a chalcogenide thin-film transistor using the n-type chalcogenide material and the p-type chalcogenide material.

SOLUTION: The method of manufacturing the chalcogenide thin-film transistor comprises: a step of forming an n-type chalcogenide layer constituting a channel layer on a substrate; a step of forming and patterning a diffusion prevention layer on the upper part of the n-type chalcogenide layer; and a step of forming a p-type chalcogenide layer constituting source and drain regions by depositing and diffusing a Te alloy on the n-type chalcogenide layer.

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