| 摘要 |
PROBLEM TO BE SOLVED: To improve the aperture ratio, while enhancing light shieldability to a TFT for pixel switching in an electro-optical device. SOLUTION: The electro-optical device includes a substrate (10); a scanning line (11); and a data line (6a); a pixel electrode (9a); a channel region (1a); a data line side source drain region (1d); a pixel electrode side source drain region (1e); a semiconductor layer (1a) having a first junction region (1b), and a second junction region (1c); a sidewall (61), which is constituted of an insulating film disposed on a sidewall of a prescribed region, including at least a part of the second junction region in the semiconductor layer; and a gate electrode (3a) which is electrically connected to the scanning line, is arranged so as to face the channel region via a gate insulating film (2) and is disposed so as to cover the prescribed region and the sidewall. COPYRIGHT: (C)2009,JPO&INPIT
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