发明名称 |
BUILT-IN SELF-REPAIR METHOD FOR NAND FLASH MEMORY AND SYSTEM THEREOF |
摘要 |
A built-in self-test system applied to NAND flash memory comprises a built-in self-test circuit, a built-in redundancy-analysis circuit, a content addressable memory, a spare memory, a page-mode processor and an address generator. The built-in self-test circuit is configured to test for defective data in a NAND flash memory. The built-in redundancy-analysis circuit is connected to the built-in self-test circuit. The content addressable memory is connected to the built-in redundancy-analysis circuit for storing the address of the defective data. The spare memory is electrically connected to the content addressable memory. The page-mode processor is configured to generate a page address signal and a compensation signal according to an address signal of the NAND flash memory. The address generator is configured to generate a current address signal according to the page address signal and compensation signal to the content addressable memory.
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申请公布号 |
US2009161431(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080194111 |
申请日期 |
2008.08.19 |
申请人 |
NATIONAL TSING HUA UNIVERSITY |
发明人 |
HSIAO YU YING;WU CHENG WEN |
分类号 |
G11C16/04;G11C15/00;G11C29/02 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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