发明名称 FIELD-EMITTER-BASED MEMORY ARRAY WITH PHASE-CHANGE STORAGE DEVICES
摘要 Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable electrical property of the devices, and/or three-dimensional memory arrays of the same.
申请公布号 US2009161420(A1) 申请公布日期 2009.06.25
申请号 US20080339696 申请日期 2008.12.19
申请人 SHEPARD DANIEL R 发明人 SHEPARD DANIEL R.
分类号 G11C11/00;G11C7/00;H01L21/00;H01L47/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址