发明名称 FAILURE DETECTION DEVICE FOR POWER CIRCUIT INCLUDING SWITCHING ELEMENT
摘要 A failure detection device detects the voltage across the main electrodes of an IGBT via a diode. The failure detection device determines occurrence of short-circuit failure in the IGBT when the anode voltage of the diode is lower than a first predetermined reference voltage. Determination can be made, excluding the case of a proper operation corresponding to a flywheel diode in an ON state, preferably together with the condition that the anode voltage of the diode is higher than a second predetermined reference voltage.
申请公布号 US2009160476(A1) 申请公布日期 2009.06.25
申请号 US20080127506 申请日期 2008.05.27
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 OMARU TAKESHI
分类号 G01R31/26 主分类号 G01R31/26
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