| 摘要 |
The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.
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