| 摘要 |
A microelectronic sensor of optical radiation based on transistor photosensitive structure comprises a first source of constant voltage, MIS –phototransistor, capacitor, resistor, and a global bus. A bipolar transistor, a passive inductance and a second source of constant voltage are brought in the said sensor. MIS phototransistor is made with a transparent gate electrode made of aurum, which is radiation-sensitive. A surface of a support is free from dielectric, radiation-sensitive and has slots above channels aria. |
