摘要 |
<p>A transistor structure that increases uniaxial compressive stress on the channel region of a tri-gate transistor comprises at least two semiconductor bodies formed on a substrate, each semiconductor body having a pair of laterally opposite sidewalls and a top surface, a common source region formed on one end of the semiconductor bodies, wherein the common source region is coupled to all of the at least two semiconductor bodies, a common drain region formed on another end of the semiconductor bodies, wherein the common drain region is coupled to all of the at least two semiconductor bodies, and a common gate electrode formed over the at least two semiconductor bodies, wherein the common gate electrode provides a gate electrode for each of the at least two semiconductor bodies and wherein the common gate electrode has a pair of laterally opposite sidewalls that are substantially perpendicular to the sidewalls of the semiconductor bodies.</p> |
申请人 |
INTEL CORPORATION;RAKSHIT, TITASH;GILES, MARTIN D.;GHANI, TAHIR;MURTHY, ANAND;CEA, STEPHEN M. |
发明人 |
RAKSHIT, TITASH;GILES, MARTIN D.;GHANI, TAHIR;MURTHY, ANAND;CEA, STEPHEN M. |