SURFACE LIGHT EMITTING LASER

摘要

A surface light emitting laser is provided with a surface light emitting laser section having an active layer (104) formed between an n-type DBR layer (102) and a p-type DBR layer (107); and an ESD protection section (113) electrically connected in parallel with the surface light emitting laser section. An ESD protection section (113) is provided with first and second semiconductor layers (108, 112) containing a first conductivity type impurity; and a third semiconductor layer (110), which is formed between the first and the second semiconductor layers (108, 112), has a band gap wider than the band gaps of the first semiconductor layer and the second semiconductor layer, and has an impurity concentration of 1x1017cm-3 or less.