| 摘要 |
A semiconductor memory device and its bank active control circuit are provided, which reduce the area of layout by delivering the command signal to activating path of the selected bank by using one command decoder. A command decoder(20) decodes the external command signal and outputs it into the internal command signal. A plurality of bank selectors(22) decode the bank address signal and output it into bank select signals corresponding to banks. Bank activation path sections of the bank active control circuit(26) are selected by bank select signals. The bank active control circuit delivers the internal command signal to the selected bank activation path section and outputs it into bank active signals. |
