| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to omit an additional process in a cell manufacturing process of a flash device by manufacturing even-numbered fine patterns. A first hard mask layer pattern forming process is performed to form even-numbered first hard mask layer patterns(33A) on an etching target layer(32). A sacrificial layer pattern forming process is performed to form a sacrificial layer pattern(35) on both sides of the first hard mask patterns. A second hard mask layer pattern forming process is performed to form second hard mask layer patterns at both sides of the first hard mask layer patterns including the sacrificial layer pattern and to form a first interval between the even-numbered first hard mask layer patterns. An etching target layer is etched by using the first and second hard mask layer patterns as etch barriers.</p> |
