| 摘要 |
A manufacturing method of a vertical channel transistor is provided to form stably and uniformly a diameter of a pillar by performing sequentially a contact forming process, a single crystalline silicon growing process, and a sacrificial layer removal process. A sacrificing layer is formed on an upper surface of a silicon substrate(21). A contact hole is formed in the sacrificing layer. A pillar is formed to fill up the contact hole. A lateral surface of the pillar is extended to a surface of the sacrificial layer. A removal process is performed to remove the sacrificing layer. A gate insulating layer(29) is formed on an exposed sidewall of the pillar. A gate electrode(30) is formed on an upper surface of the gate insulating layer in order to surround the sidewall of the pillar.
|
