| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to eliminate an additional mask in an ion implantation process by forming simultaneously a source/drain region of a PMOS gate and a base contact region. A semiconductor device includes a semiconductor substrate(10), a NMOS transistor, a base contact region(40), an emitter contact region(50), a collector contact region(60), and a p-base region(70). The semiconductor substrate includes an n-well(20) and an isolation layer(5). The NMOS transistor includes a gate(15) formed on the semiconductor substrate and a source/drain region(30) formed on the semiconductor substrate. The base contact region, the emitter contact region, and the collector contact region are formed in the n-well. The p-base region includes the base contact region and the emitter contact region and is formed in the n-well. The source/drain region, the emitter contact region, and the collector contact region are formed with n-type ions. The base contact region and the p-base region are formed with p-type ions.
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