发明名称 PHOTOVOLTAIC DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic device with low series resistance which causes no warpage of a semiconductor substrate even if it is made thin and exhibits a high suppression effect of carrier recombination. <P>SOLUTION: A photovoltaic device comprises a backside electric field layer composed of a silicon hydride film containing a p-type impurity element and oxygen and disposed between the semiconductor substrate and a back electrode, wherein the backside electric field layer includes an epitaxial layer formed on the semiconductor substrate side and a non-orientation microcrystal layer formed on the back electrode side. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009140941(A) 申请公布日期 2009.06.25
申请号 JP20070312226 申请日期 2007.12.03
申请人 MITSUBISHI ELECTRIC CORP;TOKYO INSTITUTE OF TECHNOLOGY 发明人 SATO TAKEHIKO;MATSUNO SHIGERU;KONAGAI MAKOTO
分类号 H01L31/042 主分类号 H01L31/042
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