发明名称 |
PHOTOVOLTAIC DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic device with low series resistance which causes no warpage of a semiconductor substrate even if it is made thin and exhibits a high suppression effect of carrier recombination. <P>SOLUTION: A photovoltaic device comprises a backside electric field layer composed of a silicon hydride film containing a p-type impurity element and oxygen and disposed between the semiconductor substrate and a back electrode, wherein the backside electric field layer includes an epitaxial layer formed on the semiconductor substrate side and a non-orientation microcrystal layer formed on the back electrode side. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009140941(A) |
申请公布日期 |
2009.06.25 |
申请号 |
JP20070312226 |
申请日期 |
2007.12.03 |
申请人 |
MITSUBISHI ELECTRIC CORP;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
SATO TAKEHIKO;MATSUNO SHIGERU;KONAGAI MAKOTO |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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