发明名称 IMMERSION LITHOGRAPHY WAFER EDGE BEAD REMOVAL FOR WAFER AND SCANNER DEFECT PREVENTION
摘要 A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
申请公布号 US2009163026(A1) 申请公布日期 2009.06.25
申请号 US20080339208 申请日期 2008.12.19
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 RATHSACK BENJAMEN MICHAEL;SOMERVELL MARK HOWELL
分类号 H01L21/306 主分类号 H01L21/306
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