发明名称 |
IMMERSION LITHOGRAPHY WAFER EDGE BEAD REMOVAL FOR WAFER AND SCANNER DEFECT PREVENTION |
摘要 |
A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
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申请公布号 |
US2009163026(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080339208 |
申请日期 |
2008.12.19 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RATHSACK BENJAMEN MICHAEL;SOMERVELL MARK HOWELL |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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