| 摘要 |
A semiconductor device is manufactured suppressing generation of "vacancy-oxygen complex defects". A general etching treatment is done using a general plasma gas including HBr, Cl2 and O2 till a time point when at least a part of a gate oxide film is exposed during a dry-etching step. After this time point a surface treatment is done using a plasma gas including a halogen atom having an atomic weight not less than Cl and a rare gas atom having an atomic weight not less than Ar in the same chamber. The generation of the defects which cannot be restored by heat treatment can be suppressed.
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