| 摘要 |
<p>A non-volatile memory device and a programming method thereof are provided to increase data storage capacity while not increasing physical size of a memory cell. A plurality of cell strings are arranged in a non-volatile memory device. Each of the cell strings has a drain selection transistor(DSL) and a source selection transistor, and a plurality of memory cells connected in series between the drain selection transistor and the source selection transistor. A memory cell transistor has a tunneling layer(310), an electric charge trapping layer(320), a shielding layer(330) and a control gate electrode(340) sequentially formed on a semiconductor substrate. At least one of the drain selection transistor and the source selection transistor has the same cell structure as the memory cell so as to program data.</p> |
