| 摘要 |
<p>A method for forming thin film patterns and a semiconductor manufacturing method thereof are provided to obtain stable and uniform thin film patterns having a small size by etching the thin film patterns so as to remain only side wall portions and bottom portions of holes. A plurality of underlying layers are formed on a semiconductor substrate(100) to be spaced apart from each other. Insulating films are formed on the semiconductor substrate and have holes for exposing the underlying layers. A thin film is formed on the insulating films. The thin film is etched so as to remain side wall portions and bottom portions of the holes. The underlying layer becomes a switching device(120).</p> |
